The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Zahida Batool, K. Hild, T. J. C. Hosea, +3

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesBandgap Energy EgSemiconductors +18

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

X. Lu, Daniel A. Beaton, Ryan B. Lewis, +2

Applied Physics Letters

Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringPhysics +10

Composition, mineralogy and chronology of mare basalts and non-mare materials in Von Kármán crater: Landing site of the Chang’E−4 mission

Zongcheng Ling, Le Qiao, Changqing Liu, +7

Planetary and Space Science

VolcanologyEarth ScienceMare BasaltsEngineeringPlanetary Geology +8

A Raman Spectroscopic and Microimage Analysis Perspective of the Chang'e‐5 Lunar Samples

Haijun Cao, Chen Wang, Jian Chen, +13

Geophysical Research Letters

EngineeringRaman SpectroscopicSpectroscopyPlanetary GeologyE‐5 Lunar Samples +11

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Mohammad Khaled Shakfa, D. Kalincev, X. Lu, +6

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresIi-vi Semiconductor +15

15nm-W<inf>FIN</inf> high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process

Jérôme Mitard, Liesbeth Witters, Roger Loo, +24

Materials EngineeringSemiconductor TechnologyElectrical EngineeringNm Gate LengthEngineering +11

Effects of gas flow rate on diamond deposition in a microwave plasma reactor

Wanxin Chen, X. Lu, Q. Yang, +4

Thin Solid Films

EngineeringDiamond DepositionApplied PhysicsMicrowave Plasma ReactorGas Discharge Plasma +3

Field electron emission of carbon-based nanocone films

X. Lu, Q. Yang, C. Xiao, +1

Applied Physics A

EngineeringCarbon-based MaterialNanomaterialsNanotechnologyApplied Physics +3

Effects of spatial confinement and layer disorder in photoluminescence of GaAs_1−<i>x</i>Bi_<i>x</i>/GaAs heterostructures

Yu. I. Mazur, V. G. Dorogan, Mourad Benamara, +8

Journal of Physics D Applied Physics

SemiconductorsLayer DisorderIi-vi SemiconductorOptical MaterialsEngineering +13

NEXAFS characterization of nanocrystalline diamond thin films synthesized with high methane concentrations

Q. Yang, Song Yang, Y.S. Li, +2

Diamond and Related Materials

Materials ScienceDiamond-like CarbonNanosheetEngineeringCarbon-based Material +8