X. Lu

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Zahida Batool, K. Hild, T. J. C. Hosea et al. · Journal of Applied Physics · 2012 · 188 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

X. Lu, Daniel A. Beaton, Ryan B. Lewis et al. · Applied Physics Letters · 2008 · 175 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +12

Composition, mineralogy and chronology of mare basalts and non-mare materials in Von Kármán crater: Landing site of the Chang’E−4 mission

Zongcheng Ling, Le Qiao, Changqing Liu et al. · Planetary and Space Science · 2019 · 54 citations

Volcanology, Earth Science, Mare Basalts +10

A Raman Spectroscopic and Microimage Analysis Perspective of the Chang'e‐5 Lunar Samples

Haijun Cao, Chen Wang, Jian Chen et al. · Geophysical Research Letters · 2022 · 48 citations · Full text

Engineering, Raman Spectroscopic, Spectroscopy +13

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Mohammad Khaled Shakfa, D. Kalincev, X. Lu et al. · Journal of Applied Physics · 2013 · 37 citations

Optical Materials, Engineering, Optoelectronic Devices +17