A new low specific on-resistance H k -LDMOS with N-poly diode

Power semiconductor device figure of merit for high-frequency applications

B. Jayant Baliga · IEEE Electron Device Letters · 1989 · 1K citations

Engineering, Electrical Engineering, Materials Science +17

On the static performance of the RESURF LDMOSFETS for power ICs

Md Mash-hud Iqbal, Florin Udrea, Ettore Napoli · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2009 · 109 citations

Engineering, Electrical Engineering, Electronic Materials +16

A Vertical Power MOSFET With an Interdigitated Drift Region Using High- $k$ Insulator

Xingbi Chen, Mingmin Huang · IEEE Transactions on Electron Devices · 2012 · 94 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric

Junhong Li, Ping Li, Weirong Huo et al. · IEEE Electron Device Letters · 2011 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric

Yufeng Guo, Jiafei Yao, Bo Zhang et al. · IEEE Electron Device Letters · 2015 · 68 citations · Full text

Engineering, Electrical Engineering, Materials Science +17