Jiafei Yao

Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric

Yufeng Guo, Jiafei Yao, Bo Zhang et al. · IEEE Electron Device Letters · 2015 · 68 citations · Full text

Semiconductor Technology, Electrical Engineering, Drift Region Width +13

Power Amplifier Selection for LINC Applications

Jiafei Yao, S.I. Long · IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing · 2006 · 58 citations

Electrical Engineering, Engineering, Linear Amplification +9

High-temperature reliability of all-oxide self-powered deep UV photodetector based on <i>ϵ</i>-Ga₂O₃/ZnO heterojunction

Maolin Zhang, Zeng Liu, Lili Yang et al. · Journal of Physics D Applied Physics · 2022 · 37 citations

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Maolin Zhang, Yufeng Guo, Jun Zhang et al. · Nanoscale Research Letters · 2020 · 31 citations · Full text

A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout

Kemeng Yang, Yufeng Guo, David Z. Pan et al. · IEEE Transactions on Electron Devices · 2018 · 28 citations · Full text

Device Modeling, Large Saturation, Electrical Engineering +15