Electronics Letters · 2000 · 153 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical SourcesQuantum Well DevicesQuantum WellsSemiconductor Crystal GrowthSemiconductor LasersMolecular Beam EpitaxyPulsed OperationQuantum Well GrowthQuantum Well Growth TechniquesQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser Diodes
GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 µm range based on GaAs.
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1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
K. Nakahara, Masahiko Kondow, T. Kitatani et al. · IEEE Photonics Technology Letters · 1998 · 219 citations
High power CW operation of InGaAsN lasers at 1.3µm
A. Yu. Egorov, D. Bernklau, D. A. Livshits et al. · Electronics Letters · 1999 · 114 citations