2002 · 28 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsMicrofabricationSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit FabricationRadio-frequency Integrated CircuitsCmos Fabrication ProcessesCmos Radio-frequency CircuitsInductor DesignInductorsMonolithic Microwave Integrated CircuitsParasitic Inductance EffectsRadio-frequency PackagingRf Cmos Design
We present a new approach to realizing high quality factor (Q) inductors using CMOS-compatible process steps only. The method is based on the preparation of very thick buried oxide regions beneath the inductors to reduce parasitics. The behavior of inductors fabricated with a CMOS compatible, 3-level metal silicon technology conforms well with simulations.
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