A 0.18 μm 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

Abstract

We present a self-aligned, 0.18 /spl mu/m emitter width SiGe HBT with f/sub T/ of 90 GHz, f/sub MAX/ of 90 GHz (both at V/sub CB/=0.5 V), NF/sub MIN/ of 0.4 dB, and BV/sub CEO/ of 2.7 V. We also demonstrate that this device is integrable with IBM's 0.18 /spl mu/m, 1.8/3.3 V copper metallization CMOS technology with little effect on the CMOS device properties and design rules.