A Titanium Salicide Process Suitable for Submicron CMOS Applications

Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/

J. B. Lasky, James Nakos, O.J. Cain et al. · IEEE Transactions on Electron Devices · 1991 · 346 citations

Natural Sciences, Materials Engineering, Materials Science +17

Modeling of agglomeration in polycrystalline thin films: Application to TiSi2 on a silicon substrate

T. P. Nolan, Rodney Sinclair, R. Beyers · Journal of Applied Physics · 1992 · 198 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of ion implantation doping on the formation of TiSi2

H. K. Park, J. Sachitano, M. McPherson et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 77 citations

Engineering, Materials Engineering, Materials Science +17

Activation energy for the <i>C</i>49-to-<i>C</i>54 phase transition of polycrystalline TiSi2 films with arsenic impurities

Y. Matsubara, T. Horiuchi, Koichiro Okumura · Applied Physics Letters · 1993 · 31 citations

Engineering, Materials Engineering, Materials Science +17

Formation of CoSi2 and TiSi2 on narrow poly-Si lines

H. Norström, Karen Maex, A. Romano‐Rodrı́guez et al. · Microelectronic Engineering · 1991 · 22 citations

Natural Sciences, Chemistry, Materials Science +9