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Influence of the additional p<sup>+</sup> doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

D. V. Gulyaev, A. K. Bakarov, A. I. Toropov, D. Yu. Protasov, B. Ya. Ber, D. Yu. Kazantsev

Journal of Physics D Applied Physics · 2016 · 17 citations · 19 references

DOI

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Abstract

Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors, Gulyaev, D V, Zhuravlev, K S, Bakarov, A K, Toropov, A I, Yu Protasov, D, Gutakovskii, A K, Ya Ber, B, Yu Kazantsev, D

References

19

Band parameters for III–V compound semiconductors and their alloys

I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan · Journal of Applied Physics · 2001 · 7.2K citations

, , +17

Determination of electrical transport properties using a novel magnetic field-dependent Hall technique

W. Beck, J. R. Anderson · Journal of Applied Physics · 1987 · 255 citations

, , +17

Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity Scattering

Eric D. Siggia, P.C.K. Kwok · Physical review. B, Solid state · 1970 · 164 citations

, , +16

Compensating surface defects induced by Si doping of GaAs

M. D. Pashley, K. W. Haberern · Physical Review Letters · 1991 · 139 citations

, , +16

Properties of aluminium gallium arsenide

S.J. Harrold · Microelectronics Journal · 1994 · 130 citations

, , +8