D. Yu. Protasov

Statistics

Publications

Citations

197

H-Index

Active since

2009

Affiliations

Institute of Semiconductor Physics(Current)

Russian Academy of Sciences

Siberian Branch of the Russian Academy of Sciences

Novosibirsk State Technical University

Ioffe Institute

D. Yu. Protasov is an author at Institute of Semiconductor Physics specializing in materials science, semiconductor physics, and semiconductor materials.

ORCID

Publications per year

2009–2018

Publications

The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

D. Yu. Protasov · Solid-State Electronics · 2016 · 40 citations

Engineering, Electrical Engineering, Physics +16

Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

D. Yu. Protasov, A.V. Tikhonov, A. F. Tsatsul’nikov · Semiconductors · 2013 · 34 citations

Engineering, Materials Science, Physics +16

Formation of Arrays of Free-Standing CdS Quantum Dots Using the Langmuir–Blodgett Technique

D. Yu. Protasov, Wen‐Bin Jian, Kirill A. Svit et al. · The Journal of Physical Chemistry C · 2011 · 21 citations

Natural Sciences, Materials Science, Physics +17

Characterization of MBE‐grown AlGaN layers heavily doped using silane

I. V. Osinnykh, D. Yu. Protasov, V. Yu. Davydov et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Influence of the additional p<sup>+</sup> doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

D. V. Gulyaev, A. K. Bakarov, A. I. Toropov et al. · Journal of Physics D Applied Physics · 2016 · 17 citations

Engineering, Materials Science, Physics +17

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