Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 21 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsDislocations In SemiconductorsDopingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesDislocation DensityDislocation NetworksDoping Effects On Device PerformanceGallium NitrideGallium Nitride (Gan) MaterialsNonradiative RecombinationOptical PropertiesSurface Optical Properties
Abstract The Al x Ga 1– x N layers with a wide range of AlN molar fraction (0 < x < 0.6) were grown by ammonia MBE on (0001)‐oriented sapphire substrates using silane as the silicon dopant. The structural, electrical and optical properties of the layers were investigated by atomic force microscopy, X‐ray diffraction, Hall, Raman, photoluminescence and cathodoluminescence measurements. It was found that doping affects surface morphology, dislocation density and luminescence intensity of the Al x Ga 1– x N layers. A sharp decrease of the luminescence intensity for the heavily doped GaN and Al 0.3 Ga 0.7 N layers was explained by enhancement of the nonradiative recombination rate in degenerate GaN layers and by an increase in the defect concentration in AlGaN layers. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)