I. V. Osinnykh

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Publications

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Active since

2013

Affiliations

Institute of Semiconductor Physics(Current)

Siberian Branch of the Russian Academy of Sciences

Novosibirsk State University

Ioffe Institute

Russian Academy of Sciences

I. V. Osinnykh is an author at Institute of Semiconductor Physics specializing in materials science, optical materials, and optical properties of semiconductors.

ORCID

Publications per year

2013–2024

Publications

Characterization of the green band in photoluminescence spectra of heavily doped AlxGa1− xN:Si with the Al content x > 0.5

I. V. Osinnykh, Viktor F. Plyusnin, A. S. Suranov et al. · Japanese Journal of Applied Physics · 2016 · 22 citations

Natural Sciences, Materials Science, Physics +16

Characterization of MBE‐grown AlGaN layers heavily doped using silane

I. V. Osinnykh, D. Yu. Protasov, V. Yu. Davydov et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Luminescence and superradiance in electron-beam-excited AlxGa1−x N

D. É. Zakrevsky, I. V. Osinnykh, V. I. Solomonov et al. · Journal of Applied Physics · 2014 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +12

Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

N. V. Fateev, I. V. Osinnykh, D. É. Zakrevsky · Journal of Luminescence · 2018 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +16

Decrease in the binding energy of donors in heavily doped GaN:Si layers

I. V. Osinnykh, B. Ya. Ber, D. Yu. Kazantsev · Semiconductors · 2014 · 10 citations

Engineering, Materials Engineering, Materials Science +17

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