D. Yu. Kazantsev

Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers

W. V. Lundin, A. V. Sakharov, E. E. Zavarin et al. · Semiconductors · 2009 · 32 citations

Engineering, Materials Engineering, Materials Science +16

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

B. Ya. Ber, Petr Bábor, P. N. Brunkov et al. · Thin Solid Films · 2013 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +17

Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

W. V. Lundin, A. V. Sakharov, E. E. Zavarin et al. · Journal of Crystal Growth · 2016 · 30 citations

Engineering, Materials Engineering, Materials Science +13

Radiation-stimulated photoluminescence in electron irradiated 4H-SiC

A. A. Lebedev, B. Ya. Ber, N. V. Seredova et al. · Journal of Physics D Applied Physics · 2015 · 26 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

High growth rate MOVPE of Al(Ga)N in planetary reactor

W. V. Lundin, A. E. Nikolaev, M. A. Yagovkina et al. · Journal of Crystal Growth · 2011 · 21 citations

Engineering, Materials Engineering, Materials Science +12