Electrochemical and Solid-State Letters · 2001 · 11 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsChemical Vapor DepositionSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsCrystalline SiliconFilm Growth MechanismsNitride Thin FilmsNitrides Thin FilmsSilicon NitrideSingle-crystal SiliconThin-film Growth KineticsThin-film Growth Mechanisms
This paper reports the growth of single-crystalline silicon carbon nitride films on crystal silicon substrate using for carbon source by rapid thermal chemical vapor deposition (RTCVD). Based on the scanning electron microscope analysis, the films are smooth on the surface and at the interface, which is important for device applications. A model to explain the growing mechanism of the film is being proposed. © 2001 The Electrochemical Society. All rights reserved.
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Crystalline SiCN: a hard material rivals to cubic BN
Li–Chyong Chen, Kuei‐Hsien Chen, Shih‐Chun Wei et al. · Thin Solid Films · 1999 · 93 citations
Natural Sciences, Materials Engineering, Materials Science +10
Deposition of silicon carbon nitride films by ion beam sputtering
Jih‐Jen Wu, C.-T Wu, Yujie Liao et al. · Thin Solid Films · 1999 · 47 citations
Natural Sciences, Materials Engineering, Materials Science +13