Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Shuji Nakamura · Science · 1998 · 1.9K citations

Engineering, Electrical Engineering, Materials Science +17

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Koichi Okamoto, Isamu Niki, Alexander Shvartser et al. · Nature Materials · 2004 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +14

GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

Engineering, Electrical Engineering, Materials Science +15