Applied Physics Letters · 1976 · 41 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersCoupling CoefficientDistributed Feedback LasersDouble Heterostructure DevicesDouble HeterostructuresHeterostructure LasersHeterostructuresMolecular Beam EpitaxyPeriodicity
Distributed feedback laser operation is demonstrated in stripe-geometry Pb1−xSnxTe double heterostructures grown by molecular-beam epitaxy. The grating of 1.1 μm periodicity operates in first order near 745 cm−1 (13.4 μm) under pulsed conditions in a limited range of heat-sink temperatuers (∼30–65 K) where both gain and the Bragg reflection condition can be achieved. The guide index ng≃6.1 is consistent with theoretical estimates. In Pb1−xSnxTe DH devices, by corrugating the surface after all epitaxy is completed, a large coupling coefficient for Bragg reflection can be achieved because the last confining layer can be made very thin and the grating aspect ratio large.
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Coupled-Wave Theory of Distributed Feedback Lasers
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