Concepedia

BEOL process integration for the 7 nm technology node

T. Standaert, Genevieve Beique, H.-C. Chen, S.-T. Chen, Bassem Hamieh, J. Lee, P. McLaughlin, Jeffrey M. McMahon, Yann Mignot, Frank W. Mont,

2016 · 35 citations · 5 references

Abstract

A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.

References

5

The daunting complexity of scaling to 7NM without EUV: pushing DTCO to the extreme

Lars W. Liebmann, Albert Chu, Paul Gutwin · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2015 · 51 citations

Interconnect performance and scaling strategy at 7 nm node

James Hsueh-Chung Chen, T. Standaert, Emre Alptekin et al. · 2014 · 45 citations

Electrical Engineering, Physical Design (Electronics), Engineering +12

Low-field TDDB reliability data to enable accurate lifetime predictions

E. Liniger, S. A. Cohen, Griselda Bonilla · 2014 · 19 citations

Engineering, Vlsi Design, Life Prediction +21

EUV processing and characterization for BEOL

Nicole Saulnier, Yongan Xu, Wenhui Wang et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2015 · 16 citations

Computational Lithography, Engineering, Electron-beam Lithography +17

Advanced metal and dielectric barrier cap films for Cu low k interconnects

Deepika Priyadarshini, S. Nguyen, H. Shobha et al. · 2014 · 13 citations

Engineering, Advanced Metal, Thin Film Process Technology +19