Bassem Hamieh

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 939 citations

Engineering, Nanocomputing, Semiconductor Device +17

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

BEOL process integration for the 7 nm technology node

T. Standaert, Genevieve Beique, H.-C. Chen et al. · 2016 · 35 citations

Engineering, Electron-beam Lithography, Device Integration +17

High performance bulk planar 20nm CMOS technology for low power mobile applications

Huiling Shang, S. Jain, E. Josse et al. · 2012 · 26 citations

Low-power Electronics, High Density, Electrical Engineering +14