GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1992 · 387 citations

Engineering, Materials Engineering, Materials Science +15

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

Engineering, Electrical Engineering, Materials Science +17

The Physics of Semiconductors

D. J. Lockwood · 1995 · 286 citations

Engineering, Materials Science, Physics +10

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

M. Asif Khan, M. S. Shur, John N. Kuznia et al. · Applied Physics Letters · 1995 · 273 citations

Engineering, Electrical Engineering, Materials Science +17

Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

Mark C. Benjamin, Cheng Wang, R. F. Davis et al. · Applied Physics Letters · 1994 · 222 citations

Natural Sciences, Materials Engineering, Materials Science +17