MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory

Abstract

Epitaxially grown In1−xGaxAs is integrated for the first time as replacement of polycrystalline silicon (Si) channel down to 45 nm diameter for 3-D NAND memory application. Channels with different compositions are obtained after careful surface preparation by tuning growth conditions such as: temperature, choice of precursors and flow ratio. In1−xGaxAs shows superior conduction properties than poly-Si channel: higher Ion and transconductance (gm). Potentially good memory operations are also found.