Growth of Single Crystal Al_xGa_1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy

Abstract

Al x Ga 1- x N(0001) films with flat surfaces in the composition range of x =0.1-0.4 are successfully grown directly on Si(111) using two-flow-channel metalorganic vapor phase epitaxy (MOVPE). Reflection high-energy electron diffraction (RHEED) patterns are spotty for growth temperatures between 1000°C and 1150°C, indicating that the Al x Ga 1- x N film is a single crystal. In addition, good control of the AlN mole fraction (0.1 to 0.4) is achieved by changing the gas ratio of the group III gas sources.