Journal of Physics D Applied Physics · 2015 · 16 citations · 23 references
EngineeringMaterials SciencePhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsAbsorption CoefficientsAbsorption SpectraBand GapDynamic RangeIndirect Band GapLight Absorption CoefficientsSemiconductor Band Gap DeterminationSemiconductor Characterization
The absorption properties of Al0.52In0.48P have been investigated near the fundamental absorption edge by measuring the photocurrent as a function of wavelength in a series of PIN and NIP diodes. Modelling of the photocurrent in these structures enables the absorption coefficients to be determined accurately over a wide dynamic range, which allows the direct and indirect band-gap to be determined.
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Optical Constants of Silicon in the Region 1 to 10 ev
H. R. Philipp, E. A. Taft · Physical Review · 1960 · 562 citations