Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies

Abstract

14 nm technology node bulk silicon FinFETs and SOI FinFETs and 14 nm SOI Ultra-Thin-Body and BOX nFETs were irradiated under bias using a 10 keV X-ray source. Irradiation resulted in significant changes in the threshold voltages of the SOI devices and large changes in the off-state current of the bulk FinFETs.