Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN - Concepedia

Concepedia

Publication | Closed Access

Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

12

Citations

14

References

2015

Year

Aaron R. Arehart, A. Sasikumar, G. D. Via, Brian Poling, Eric R. Heller, Steven A. Ringel

Microelectronics Reliability

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorEc-0.57 Ev TrapPhysicsApplied PhysicsGan Power Device

References

	Year	Citations

Page 1