Semi-polar GaN LEDs on Si substrate

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

Engineering, Materials Engineering, Materials Science +12

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 273 citations

Engineering, Materials Engineering, Materials Science +13

GaN-Based Devices on Si

A. Krost, A. Dadgar · physica status solidi (a) · 2002 · 183 citations

Engineering, Materials Engineering, Materials Science +17

Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure

Takahiro Deguchi, Kaoru Sekiguchi Kaoru Sekiguchi, Atsushi Nakamura et al. · Japanese Journal of Applied Physics · 1999 · 148 citations

Natural Sciences, Materials Science, Physics +16

Atomic arrangement at the AlN/Si (111) interface

R. Liu, F. A. Ponce, A. Dadgar et al. · Applied Physics Letters · 2003 · 126 citations

Engineering, Materials Engineering, Materials Science +17