Novel Surface Preparation Methods for Covalent and Conductive Bonded Interfaces Fabrication

Abstract

A novel wafer bonding technology, designed to enable covalent and conductive wafer bonding processes at low temperature was developed. Covalent and conductive bonding processes at low temperatures and even room temperature may become key technology in order to fabricate high performance junctions in compound semiconductor integration applications. This work is presenting the first process qualification results obtained for Si wafers. Apart from equipment characterization data, e.g. particle contamination, data presented here include HR-TEM, EDXS and bond strength analysis achieved for Si-Si hydrophobic wafer bonding.