Effects of trimethylindium on the purity of In0.5Al0.5P and In0.5Al0.5as epilayers grown by metalorganic chemical vapor deposition

GaInAs-AlInAs structures grown by molecular beam epitaxy

Hideo Ohno, C. E. C. Wood, L. Rathbun et al. · Journal of Applied Physics · 1981 · 81 citations

Natural Sciences, Materials Engineering, Materials Science +17

Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursors

T. F. Kuech, R. M. Potemski, F. Cardone et al. · Journal of Electronic Materials · 1992 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +9

Characterization of epitaxial GaAs and Al<i>x</i>Ga1−<i>x</i>As layers doped with oxygen

Mark S. Goorsky, T. F. Kuech, F. Cardone et al. · Applied Physics Letters · 1991 · 50 citations

Engineering, Materials Engineering, Materials Science +17

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

C. Heedt, Fred Buchali, W. Prost et al. · IEEE Transactions on Electron Devices · 1994 · 26 citations

Engineering, Electrical Engineering, Physics +17

Characteristics of Schottky diodes on Al_xIn_1-xAs grown by MOCVD

P.D. Hodson, R.H. Wallis, J. I. Davies et al. · Semiconductor Science and Technology · 1988 · 19 citations

Engineering, Materials Engineering, Materials Science +17