Concepedia

Characteristics of Schottky diodes on Al<sub>x</sub>In<sub>1-x</sub>As grown by MOCVD

P.D. Hodson, R.H. Wallis, J. I. Davies, J.R. Riffat, A.C. Marshall

Semiconductor Science and Technology · 1988 · 19 citations · 9 references

DOI

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Abstract

The effects of surface pretreatment and a variety of metallisation techniques on the characteristics of Schottky diodes fabricated on AlxIn1-xAs grown by low-pressure and atmospheric-pressure MOCVD have been investigated. Barrier heights have been determined from I-V, C-V and I-T measurements and have been found to be in good agreement. Barrier heights of about 0.69 eV were measured for Al0.48In0.52As using Pt as the Schottky barrier contact.

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