P.D. Hodson

Improvements in the structural quality of Al_0.48In_0.52As grown by low pressure metal-organic vapour-phase epitaxy

J. I. Davies, P.D. Hodson, A.C. Marshall et al. · Semiconductor Science and Technology · 1988 · 25 citations

Engineering, Materials Engineering, Materials Science +17

Characteristics of Schottky diodes on Al_xIn_1-xAs grown by MOCVD

P.D. Hodson, R.H. Wallis, J. I. Davies et al. · Semiconductor Science and Technology · 1988 · 19 citations

Engineering, Materials Engineering, Materials Science +17

GaInAs PIN photodiodes grown on silicon substrates for 1.55 μm detection

P.D. Hodson, R. R. Bradley, J.R. Riffat et al. · Electronics Letters · 1987 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Control of defects in the heteroepitaxial growth of GaAs on silicon

RR Bradley, JA Beswick, TB Joyce et al. · Vacuum · 1990 · 13 citations

Engineering, Materials Engineering, Materials Science +12

Resonant tunnelling in AlInas/GaInAs double barrier diodes grown by MOCVD

P.D. Hodson, David J. Robbins, R.H. Wallis et al. · Electronics Letters · 1988 · 12 citations

Engineering, Materials Engineering, Materials Science +17