Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2006 · 17 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsMicrowave Semiconductor DevicesWide Band Gap SemiconductorsBicmos TechnologyCutoff FrequencyDevice OptimizationJunction Leakage CurrentMillimeter-wave Integrated CircuitsResistivitySchottky Barrier DiodesSchottky Barriers
For the first time, a high performance, low leakage Schottky barrier diode (SBD) with cutoff frequency above 1.0 THz in a 130nm SiGe BiCMOS technology for millimeter-wave application is described. Device optimization has been evaluated by varying critical process and layout parameters such as, anode size, cathode depth, cathode resistivity, junction tailoring, and guardring optimization is investigated
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A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT
Advanced passive devices for enhanced integrated RF circuit performance
D. Coolbaugh, E. Eshun, R. Groves et al. · 2003 · 39 citations