IEEE Transactions on Electron Devices · 1988 · 16 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThin Film Electrical PropertiesThin-film MaterialsThin-film TransistorsHydrogen PassivationLow-temperature Polycrystalline Silicon TechnologyPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsPolysiliconProcess Temperature EffectsSilicon Thin FilmsThin-film Semiconductors
Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600 degrees C) oxidized semi-insulating polysilicon (SIPOS) as the gate insulator. Even though no process temperature exceeds 600 degrees C, no threshold drift has been observed. In addition, low threshold voltages and effective mobilities as high as 44 cm/sup 2//V.s were measured, and an ON/OFF current ratio >5*10/sup 5/ has been achieved after hydrogen passivation. As a result, these devices are highly suitable for application to flat-panel displays on low-melting-point glass.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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