On the Role of the N–N$^{+}$ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This paper focuses on the role of the N–N<formula formulatype="inline"> <tex>$^{+}$</tex></formula> junction doping profile model of a PiN diode on its turn-off transient and, particularly, the influence of multiple epitaxies in the N–N<formula formulatype="inline"><tex>$^{+}$</tex></formula> profile. A conventional doping profile model has been used in a previous work and an identification procedure for the main design parameters has been demonstrated. However the validity range of identified PiN-diode models appeared quite limited for hard current and voltage conditions. Readers have asked for the effect of a more advanced doping profile. The turn-off transient of an STTB506D device is considered from experimental and simulation point-of-view inside a fully characterized switching cell. A limitation of the conventional doping profile model is demonstrated and explained physically in order to introduce the necessity of a more complex doping profile. An advanced doping profile is then considered and a comparative study between experimental and simulated turn-off transient behavior of the device is established. </para>