Concepedia

Junction Modeling

Junction Modeling is a theoretical framework in semiconductor physics that mathematically characterizes the behavior of charge carriers at a p-n junction under varying electrical and thermal conditions, distinguishing itself by enabling the prediction of current-voltage characteristics and depletion region dynamics in semiconductor devices.

770

Publications

29.6K

Citations

2.2K

Authors

681

Institutions

Publications per year

2017–2026

84

Parents

Publications

770

An Integral Charge Control Model of Bipolar Transistors

H.K. Gummel, H.C. Poon · Bell System Technical Journal · 1970 · 650 citations

, , +17

Electric field effect on the thermal emission of traps in semiconductor junctions

G. Vincent, A. Chantre, D. Bois · Journal of Applied Physics · 1979 · 523 citations

, , +13

Ionization Rates of Holes and Electrons in Silicon

C. A. Lee, R. A. Logan, R. L. Batdorf et al. · Physical Review · 1964 · 475 citations

, , +16

Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages

Donald C. Wunsch, Robert Bell · IEEE Transactions on Nuclear Science · 1968 · 405 citations

, , +16

Superjunction Power Devices, History, Development, and Future Prospects

Florin Udrea, Gerald Deboy, Tatsuhiko Fujihira · IEEE Transactions on Electron Devices · 2017 · 386 citations

, , +14

1–5 of 770

Authors

2.2K

  1. FU
    Florin Udrea

    University of Cambridge, United Kingdom

    8 publications · 645 citations

    8

    h-index

  2. JH
    J.L. Hudgins

    University of South Carolina, United States

    7 publications · 199 citations

    7

    h-index

  3. ES
    Enrico Santi

    University of South Carolina, United States

    7 publications · 199 citations

    7

    h-index

  4. SB
    Salvatore Bellone

    University of Salerno, Italy

    6 publications · 101 citations

    6

    h-index

  5. JJ
    Juin J. Liou

    University of Central Florida, United States

    6 publications · 121 citations

    6

    h-index

1–5 of 2.2K

Institutions

681

  1. Centre National de la Recherche Scientifique

    Paris, France

    16 h-index

    76 publications

    2.3K citations

  2. University of Cambridge

    Cambridge, United Kingdom

    15 h-index

    33 publications

    1.8K citations

  3. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    11 h-index

    42 publications

    3.3K citations

  4. Technical University of Denmark

    Kongens Lyngby, Denmark

    10 h-index

    27 publications

    1.5K citations

  5. University of Salerno

    Fisciano, Italy

    10 h-index

    20 publications

    551 citations

  6. University of Naples Federico II

    Naples, Italy

    10 h-index

    27 publications

    713 citations

  7. École Polytechnique Fédérale de Lausanne

    Lausanne, Switzerland

    10 h-index

    32 publications

    639 citations

  8. Philips (Netherlands)

    Amsterdam, The Netherlands

    10 h-index

    29 publications

    2.1K citations

1–8 of 681

Venues

  1. IEEE Transactions on Electron Devices

    98 publications · 3.8K citations

    31

    h-index

  2. Journal of Applied Physics

    68 publications · 2.8K citations

    25

    h-index

  3. Solid-State Electronics

    52 publications · 1.4K citations

    21

    h-index

  4. Applied Physics Letters

    31 publications · 1.1K citations

    18

    h-index

  5. Physical review. B, Condensed matter

    PRB · 30 publications · 957 citations

    18

    h-index

1–5