Concepedia

Doping Behavior

Doping Behavior is a material modification strategy in amorphous electronic materials that refers to the controlled introduction of impurities to alter electrical properties, distinguished by its reliance on localized electronic states rather than long-range crystalline order.

811

Publications

37.2K

Citations

3.7K

Authors

996

Institutions

Publications per year

2017–2026

250

Parents

Publications

811

Molecular Doping of Graphene

Tim O. Wehling, Kostya S. Novoselov, M. I. Katsnelson et al. · Nano Letters · 2007 · 1.1K citations · Full text

, , +17

Substitutional doping of amorphous silicon

P. G. Le Comber · Solid State Communications · 1975 · 1.1K citations

, , +14

The doping dependence of T* – what is the real high-Tc phase diagram?

Physica C Superconductivity · 2001 · 630 citations · Full text

, , +12

Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide

R. N. Hall, Joshua Racette · Journal of Applied Physics · 1964 · 617 citations

, , +15

A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds

Shengbai Zhang, Su‐Huai Wei, Alex Zunger · Journal of Applied Physics · 1998 · 466 citations

, , +17

1–5 of 811

Authors

3.7K

  1. DS
    Damir Sekulić

    University of Split, Croatia

    7 publications · 179 citations

    7

    h-index

  2. JR
    John Robertson

    University of Cambridge, United Kingdom

    5 publications · 520 citations

    5

    h-index

  3. KI
    K. Irmscher

    Leibniz Institute for Crystal Growth, Germany

    4 publications · 342 citations

    4

    h-index

  4. BD
    B. De Salvo

    Commissariat à l'Énergie Atomique et aux Énergies Alternatives, France

    3 publications · 155 citations

    3

    h-index

  5. AZ
    Alex Zunger

    National Laboratory of the Rockies, United States

    3 publications · 968 citations

    3

    h-index

1–5 of 3.7K

Institutions

996

  1. Chinese Academy of Sciences

    Beijing, China

    21 h-index

    134 publications

    5.4K citations

  2. Centre National de la Recherche Scientifique

    Paris, France

    15 h-index

    41 publications

    2.5K citations

  3. The University of Tokyo

    Tokyo, Japan

    11 h-index

    48 publications

    2.2K citations

  4. University of Chinese Academy of Sciences

    Beijing, China

    11 h-index

    35 publications

    1.5K citations

  5. University of Cambridge

    Cambridge, United Kingdom

    10 h-index

    20 publications

    2.1K citations

  6. Tohoku University

    Sendai, Japan

    10 h-index

    25 publications

    462 citations

  7. National Laboratory of the Rockies

    Golden, United States

    9 h-index

    29 publications

    3.9K citations

  8. National Institute of Advanced Industrial Science and Technology

    Tsukuba, Japan

    8 h-index

    23 publications

    1.4K citations

1–8 of 996

Venues

  1. Applied Physics Letters

    60 publications · 3.9K citations

    36

    h-index

  2. Journal of Applied Physics

    41 publications · 3.1K citations

    23

    h-index

  3. Physical review. B, Condensed matter

    PRB · 25 publications · 1.5K citations

    17

    h-index

  4. Journal of Alloys and Compounds

    15 publications · 460 citations

    14

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 21 publications · 468 citations

    14

    h-index

1–5