Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs

Abstract

Pulsed laser-induced current transient experiments are used to understand the mechanisms of single-event effects in bulk and fully depleted silicon-on-insulator p-channel FinFETs. The drain current transients are significantly larger in the bulk FinFETs than in the SOI devices. Bulk FinFETs collected 270 times more charge than SOI FinFETs. 98% of the charge collected in the bulk FinFETs is generated in the substrate. The rest of the collected charge (2%) is generated in the fins. Most of the collected charge in the SOI FinFets is generated in the fins.