Concepedia

Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching

Tongbo Wei, Jiankun Yang, Qiang Hu, R.F. Duan, Zimu Huo, Junyang Wang, Y.P. Zeng, G.H. Wang, J.M. Li

Journal of Crystal Growth · 2010 · 14 citations · 26 references

DOI

Concepts

References

26

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature · 2000 · 1.7K citations

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Energetics and electronic structure of stacking faults in AlN, GaN, and InN

Catherine Stampfl, Chris G. Van de Walle · Physical review. B, Condensed matter · 1998 · 331 citations

, , +16

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

R. Schifano, B. Monemar, T. Paskova et al. · Journal of Applied Physics · 2005 · 197 citations

, , +17

Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

B. A. Haskell, Troy J. Baker, Melvin McLaurin et al. · Applied Physics Letters · 2005 · 196 citations

, , +17

Defect reduction in (1120) <i>a</i>-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell, Feng Wu, Michael D. Craven et al. · Applied Physics Letters · 2003 · 175 citations

, , +17