Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFETs

Ying-Che Tseng, Wen-ling Huang, P. Welch, J.M. Ford, J.C.S. Woo

IEEE Electron Device Letters · 1998 · 21 citations · 7 references

Concepts

Abstract

Low-frequency (LF) noise overshoot has been empirically correlated with the frequency dependence of the kink effect in floating body SOI MOSFETs. Based on the correlation between these unique ac characteristics in SOI, a new mechanism is proposed to explain the well-known kink-related noise overshoot. Also, device solutions for suppressing LF noise overshoot will be discussed.

References

7