Electrochemical and Solid-State Letters · 2009 · 29 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsAmorphous Electronic MaterialsAmorphous SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsAmorphous Indium Gallium Zinc OxideAmorphous Oxide SemiconductorsAnnealingContact ResistanceEnergy DensityLaser AnnealingSubthreshold SwingThreshold Voltage
This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from to ). Our TFTs had a field-effect mobility of , an on/off ratio of , a threshold voltage of −0.15 V, and a subthreshold swing of 0.26 V/decade.
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