IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 12 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNoise In Semiconductor DevicesPhotodetectorsBandwidthDistributed AmplifiersGainGroup DelayHigh-speed OperationLow-noise AmplifiersNoise FigurePhotodetector Responsivity
An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.
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