Journal of Applied Physics · 1972 · 231 citations · 5 references
Natural SciencesElectrical EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCarrier TransportCharge Carrier TransportMetal-semiconductor ContactsOxide SemiconductorsQuantum TunnelingSemiconductor PhysicsCarrier Tunneling Across InterfacesCharge TrapsQuantum Tunneling EffectsTime ConstantTunneling In SemiconductorsTunneling PhenomenaTunneling TimeTunneling Transport
Tunneling of charge carriers between a metal (or a semiconductor) and traps in an insulator on top of the metal is studied in this paper. The tunneling time constant for a three-dimensional δ-function trap is derived and compared with experiments on metal-nitride oxide semiconductor structures.
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Theory of tunneling into interface states
Leo B. Freeman, Walter E. Dahlke · Solid-State Electronics · 1970 · 179 citations
Kent Lundström, C. Svensson · IEEE Transactions on Electron Devices · 1972 · 123 citations
MEMORY BEHAVIOR OF AN MNS CAPACITOR
H.C. Pao, Maurice R. O’Connell · Applied Physics Letters · 1968 · 40 citations