Electronics Letters · 1970 · 35 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice SimulationMemory DevicesMemory ModelingMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsMemristive MemoryMetal-oxide-semiconductor Field-effect Transistor ModelingOxide Thin-film TransistorsSiliconSilicon DioxideSilicon NitrideSilicon-on-insulator TechnologyThin-film Transistor Modeling
A general model for the transient behaviour of m.i.s. memory transistors is presented. The model is applied to a practical memory transistor which has an insulator layer consisting of 500–1000 Å silicon nitride on 15–25 Å silicon dioxide. The properties of this device are calculated and are shown to agree with experimental data.