IEEE Electron Device Letters · 1985 · 31 citations · 5 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesBipolar Junction TransistorsDevice ModelingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsBipolar Junction Transistor ModelingEquivalent Circuit AnalysisEquivalent Circuit ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingPower MosfetsSpeedSwitching Behavior
Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turnoff waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process. The model is applied to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistance.
5
The COMFET—A new high conductance MOS-gated device
John P. Russell, Alvin M. Goodman, L.A. Goodman et al. · IEEE Electron Device Letters · 1983 · 201 citations
The insulated gate rectifier (IGR): A new power switching device
B. Jayant Baliga, M.S. Adler, P. Gray et al. · 1982 · 199 citations