IEEE Electron Device Letters · 1992 · 35 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor InterfacesWide-bandgap Semiconductor DevicesCurrent DensityCurrent InjectionCurrent Injection EfficiencyElectroluminescenceGraded JunctionsLight-emitting DevicesSilicon CarbideSilicon Carbide (Sic) Materials
To improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), a p-i-n TFLED with a graded p-i junction was proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement is attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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