Visible-Light Injection-Electroluminescent a-SiC/p-i-n Diode

Abstract

A new type of visible-light injection-electroluminescent a-SiC diode has been developed. The LED has the structure of p a-SiC/i a-SiC/n a-SiC. Visible white-green, yellowish-orange and red light emissions have been observed for the first time in these junctions at room temperature. It is demonstrated that emitting color can be controlled by choosing the optical band gap of the luminescent active i a-SiC layer. The brightness of the yellowish-orange emission was 0.13 cd/m 2 with a forward injection current density of 200 mA/cm 2 for 0.033 cm 2 cell area.