Concepedia

Graded Junctions

Graded Junctions is a type of semiconductor p-n junction in which the transition between the p-type and n-type regions occurs gradually over a finite distance, distinguished from abrupt junctions by its continuous variation in doping concentration.

105

Publications

4.3K

Citations

350

Authors

133

Institutions

Publications per year

2017–2026

10

Parents

Publications

105

Open junctions in the endothelium of the postcapillary venules of the diaphragm.

N Simiónescu, Maya Simionescu, George E. Palade · The Journal of Cell Biology · 1978 · 179 citations · Full text

, , +14

Theory of Microplasma Instability in Silicon

R.J. McIntyre · Journal of Applied Physics · 1961 · 176 citations

, , +16

Negative resistance in p-n junctions under avalanche breakdown conditions, part II

T. Misawa · IEEE Transactions on Electron Devices · 1966 · 131 citations

, , +17

Band-gap-graded Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> drives highly efficient solar cells

Hongling Guo, Rutao Meng, Gang Wang et al. · Energy & Environmental Science · 2021 · 130 citations

, , +17

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

Shibin Li, Morgan E. Ware, Jiang Wu et al. · Applied Physics Letters · 2012 · 129 citations

, , +15

1–5 of 105

Authors

350

  1. ME
    Morgan E. Ware

    University of Arkansas at Fayetteville, United States

    2 publications · 147 citations

    2

    h-index

  2. IV
    I. V. Grekhov

    Ioffe Institute, Russia

    2 publications · 36 citations

    2

    h-index

  3. IA
    Isamu Akasaki

    Meijo University, Japan

    2 publications · 46 citations

    2

    h-index

  4. PR
    Pavel Rodin

    Ioffe Institute, Russia

    2 publications · 36 citations

    2

    h-index

  5. RJ
    R. J. Malik

    AT&T (United States), United States

    2 publications · 179 citations

    2

    h-index

1–5 of 350

Institutions

133

  1. NTT (Japan)

    Tokyo, Japan

    5 h-index

    10 publications

    553 citations

  2. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    4 h-index

    15 publications

    919 citations

  3. RCA (United States)

    New York, United States

    3 h-index

    5 publications

    179 citations

  4. HRL Laboratories (United States)

    Malibu, United States

    3 h-index

    10 publications

    204 citations

  5. Meijo University

    Nagoya, Japan

    2 h-index

    14 publications

    338 citations

  6. General Electric (United States)

    Boston, United States

    2 h-index

    2 publications

    125 citations

  7. Shanghai University

    Shanghai, China

    2 h-index

    8 publications

    242 citations

  8. National Central University

    Taoyuan City, Taiwan

    2 h-index

    8 publications

    184 citations

1–8 of 133

Venues

  1. IEEE Transactions on Electron Devices

    17 publications · 1K citations

    15

    h-index

  2. Journal of Applied Physics

    11 publications · 417 citations

    11

    h-index

  3. Applied Physics Letters

    13 publications · 530 citations

    11

    h-index

  4. IEEE Electron Device Letters

    9 publications · 256 citations

    9

    h-index

  5. Solid-State Electronics

    6 publications · 176 citations

    6

    h-index

1–5