Negative resistance in p-n junctions under avalanche breakdown conditions, part II

Abstract

The small-signal impedance of the space-charge region of p-n junctions under avalanche breakdown conditions is calculated using reasonably realistic dependences of electron and hole ionization rates and drift velocities upon electric field. Two structures are analyzed: one is p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> νn <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> structure which has a fairly uniform distribution of avalanche multiplication, and the other is a singly diffused junction which is a hybrid of an abrupt and a linear graded junction. Both structures show negative resistance when the transit time of carriers becomes appreciable. A computer program was evolved which requires, as input, the impurity profile and field dependences of ionization rates and drift velocities. The program first calculates the dc field and electron and hole currents and then solves the ac small-signal problem. Both the ac small-signal impedance and the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Q</tex> of the diode are calculated.