IEEE Transactions on Electron Devices · 2006 · 14 citations · 11 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationGap JunctionsIntegrated Circuit DesignIntegrated Circuit DevicesMemory DevicesBreakdown VoltageCell InjectionCurrent Injection EfficiencyExperimental Results InterpretationMemory Cell DesignMemory Circuit DesignMetal-oxide-semiconductor Field-effect Transistor ModelingNon-volatile Memory Design
In this paper, new experimental results on the injection efficiency of split-gate memory cells programmed in the source-side-injection mode are reported. It is shown that the gap size has a negligible effect on the cell injection efficiency and, when the read current is not a limiting factor, it can be made large in order to increase the breakdown voltage of the oxide in the gap region, thus enhancing the cell reliability without detrimental effects on the performance. The experimental data is interpreted with the aid of fullband Monte Carlo simulations.
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Non-local impact ionization in silicon devices
J.W. Slotboom, G. Streutker, M.J. van Dort et al. · 2002 · 105 citations
Engineering, Electrical Engineering, Electronic Materials +16