2002 · 12 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsSemiconductor HeterostructuresHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-frequency ElectronicsMicrowave Oscillator DesignPhase NoisePower OutputPower Output MeasurementRadio-frequency Integrated Circuit Design
This paper reports on the DC and microwave performance of novel X-band voltage controlled oscillators fabricated by integrating heterostructure interband tunneling diode (HITD) with a heterostructure FET. The measured RF performance of VCOs incorporating single and double HITDs is discussed. The power output of the single HITD VCO was 2.0 dBm and that of the dual HITD was 4.3 dBm at a center frequency of 8.2 GHz. The dual HITD VCO also exhibited a wider tuning range than the single HITD VCO. The phase noise of these VCOs was approximately -128 dBc, 3 MHz away from the center frequency.
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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16