G. Krämer

Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy

R. Tsui, J. Curless, G. Krämer et al. · Journal of Applied Physics · 1985 · 48 citations

Aluminium Nitride, Engineering, Crystal Growth Technology +17

Properties of Al<i>x</i>Ga1−<i>x</i>As (<i>x</i>Al≂0.3) grown by molecular-beam epitaxy on misoriented substrates

R. Tsui, J. Curless, G. Krämer et al. · Journal of Applied Physics · 1986 · 40 citations

Optical Materials, Smooth Layers, Engineering +17

Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system

Jun Shen, G. Krämer, S. Tehrani et al. · IEEE Electron Device Letters · 1995 · 37 citations

Semiconductors, Electrical Engineering, Electronic Devices +15

Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

R. Tsui, G. Krämer, J. Curless et al. · Applied Physics Letters · 1986 · 34 citations · Full text

Intrinsic Photoluminescence, Aluminium Nitride, Optical Materials +17

An exclusive-nor based on resonant interband tunneling FET's

Jun Shen, S. Tehrani, H. Goronkin et al. · IEEE Electron Device Letters · 1996 · 34 citations

Device Modeling, Current Control Capabilities, Electrical Engineering +11