Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 1.9K citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors

D. G. Thomas, J. J. Hopfield, W. M. Augustyniak · Physical Review · 1965 · 795 citations

Engineering, Excitation Energy Transfer, Edge Emission +20

Nitrogen-related local vibrational modes in ZnO:N

A. Kaschner, U. Haboeck, Martin Straßburg et al. · Applied Physics Letters · 2002 · 462 citations

Materials Science, Nitrogen Concentration, Engineering +12

Heavily doped <i>p</i>-ZnSe:N grown by molecular beam epitaxy

Jun Qiu, J. M. DePuydt, Hai‐Ping Cheng et al. · Applied Physics Letters · 1991 · 293 citations

Optical Materials, Engineering, N Films +16

Band-edge emission in ZnO

E. Tomzig, R. Helbig · Journal of Luminescence · 1976 · 107 citations

Photoluminescence, Engineering, Electron Spectroscopy +4