A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques

Concepts

EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignDevice ModelingIntegrated Circuit DesignMemory DevicesVoltage ScalingContent-addressable MemoryContent-addressable Memory (Cam)Low-voltage Cmos DesignMemory Circuit DesignNon-volatile Memory Design

Abstract

This paper reports a novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques. With two auxiliary pass transistors to dynamically control the bodies of transistors in the tag-compare portion of CAM cell, this SOI CAM cell has a fast tag-compare capability at a low supply voltage of 0.7 V as verified by the results from the two-dimensional semiconductor device simulation program MEDICI.

References

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